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Scientists discover way to “grow” sub-nanometer sized transistors - EurekAlert
A research team led by Director JO Moon-Ho of the Center for Van der Waals Quantum Solids within the Institute for Basic Science (IBS) has implemented a novel method to achieve epitaxial growth of 1D metallic materials with a width of less than 1 nm. The group applied this process to develop a new structure for 2D semiconductor logic circuits. Notably, they used the 1D metals as a gate electrode of the ultra-miniaturized transistor.
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