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Ultrathin Sn-doped Ga2O3 for power field-effect transistors: Si-compatible 4-inch array with high-k gate dielectric - EurekAlert
A physical vapor deposition method was developed to successfully prepare 4-inch Sn-doped Ga2O3 films with an 8-nm thickness on heterogeneous Si substrates, with doping conveniently achieved through co-sputtering Sn. The field-effect transistors (FETs) adopting 8-nm Sn-doped Ga2O3 as the channel layer show good characteristics, including a large on-state current and a high on/off ratio, alongside a high breakdown voltage of 426 V. After one year of exposure to air, the 8-nm Sn-doped Ga2O3 FETs maintain normal characteristics, enduring ±100 V gate-bias stress for 1 h and retaining a breakdown voltage of over 400 V after the stress. Furthermore, a 4-inch array of 8-nm Sn-doped Ga2O3 FETs with high-k Ta2O5/pristine Ga2O3 gate dielectrics is presented, exhibiting excellent uniformity and improved performances.
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