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Multilayer MoS2 photodetector with broad spectral range and multiband response - EurekAlert


As a typical two-dimensional material, MoS<sub>2</sub>&nbsp;exhibits unique optical and electrical properties due to its atomic thickness in the vertical dimension, making it a research hotspot in the field of optoelectronic detection. The performance of MoS<sub>2</sub>&nbsp;devices highly depends on their material characteristics, device structures, and fabrication techniques. Therefore, the photodetection characteristics of MoS<sub>2</sub>&nbsp;devices may be determined by various physical effects, which contribute to the development of wideband MoS<sub>2</sub>-based photodetectors. A research team from the school of Electronic Science and Engineering of Southeast University has developed wideband MoS<sub>2</sub>&nbsp;photodetector, covering a range from 410 to 1550 nm.&nbsp;Through a series of electrical and optoelectronic experiments, the paper reveals the working mechanism of the multi-band optical response of the&nbsp;MoS<sub>2</sub>&nbsp;device. Meanwhile, the paper found that the performance of this&nbsp;MoS<sub>2</sub>&nbsp;detector device is closely related to its preparation process engineering through comparative experiments, and under the optimal process, the device has maximum responsivity of&nbsp;33.75 A W<sup>&minus;1</sup>, and the corresponding detectivity of&nbsp;6.1&times;10<sup>11</sup>&nbsp;cm Hz<sup>1/2</sup>&nbsp;W<sup>&minus;1</sup>&nbsp;under the light illumination of&nbsp;480 nm&nbsp;wavelength.

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