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Multilayer MoS2 photodetector with broad spectral range and multiband response - EurekAlert

As a typical two-dimensional material, MoS₂ exhibits unique optical and electrical properties due to its atomic thickness in the vertical dimension, making it a research hotspot in the field of optoelectronic detection. The performance of MoS₂ devices highly depends on their material characteristics, device structures, and fabrication techniques. Therefore, the photodetection characteristics of MoS₂ devices may be determined by various physical effects, which contribute to the development of wideband MoS₂-based photodetectors. A research team from the school of Electronic Science and Engineering of Southeast University has developed wideband MoS₂ photodetector, covering a range from 410 to 1550 nm. Through a series of electrical and optoelectronic experiments, the paper reveals the working mechanism of the multi-band optical response of the MoS₂ device. Meanwhile, the paper found that the performance of this MoS₂ detector device is closely related to its preparation process engineering through comparative experiments, and under the optimal process, the device has maximum responsivity of 33.75 A W^−1, and the corresponding detectivity of 6.1×10¹¹ cm Hz^1/2 W^−1 under the light illumination of 480 nm wavelength.

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