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1200 V GaN HEMTs for the energy transition - EurekAlert
Powerful and energy-efficient electronic components are key to the energy transition. They contribute to making applications such as electromobility, or electronic air conditioning technologies viable for everyday use across the board. Fraunhofer IAF is supporting this transformation by developing novel technologies for lateral and vertical GaN transistors with blocking voltages above 1200 V. The institute will present the advantages and the current state of development of their GaN technologies at PCIM Europe 2024 from June 11 to 13, 2024 in Nuremberg.
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