Get the latest Science News and Discoveries

Development of 3kV-class gallium oxide epitaxial layer and device technologies - EurekAlert


Electronics and Telecommunications Research Institute (ETRI) of Korea and its research team have successfully developed core material and device process technologies of gallium oxide (Ga2O3) power semiconductors, called as the next-generation power semiconductors.

None

Get the Android app

Or read this on Eureka Alert

Read more on:

Photo of Development

Development

Photo of class

class

Photo of EurekAlert

EurekAlert

Related news:

News photo

More efficient molecular motor widens potential applications - EurekAlert

News photo

New study infers our wellbeing by analyzing the language we use around ageing, using language markers to enable "a ... - EurekAlert

News photo

The first chromosome-level reference genomes of the ornamental banana and pink banana - EurekAlert